C-V profiling of ultra-shallow junctions using a buried layer with stepped doping

The paper investigates two-sided capacitance-voltage (C-V) technique for application in doping profile characterization of Si ultra shallow p+-n junctions. Stepped doping profile in the n region is designed for the accurate determination of xn0, a crucial parameter for the extraction of the doping profile in the p region. Medici simulations are...