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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)
Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...
journal article 2021
document
Balakrishnan, Aneesh (author), Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Hamdioui, S. (author), Jenihhin, Maksim (author), Alexandrescu, Dan (author)
The Soft-Error (SE) reliability and the effects of Negative Bias Temperature Instability (NBTI) in deep submicron technologies are characterized as the major critical issues of high-performance integrated circuits. The previous scientific research studies provide a comprehensive description that the soft-error vulnerability becomes more severe...
conference paper 2021
document
Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)
Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...
conference paper 2020