Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor

Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...

Real Time Selective Detection of Experimentally Generated DC Series Arcs

Localization of series arc faults in dc microgrids is an important requirement to guarantee operational safety and uninterrupted power to end users. In the previous EPE-ECCE proceeding, a theoretical proof was provided for the selective series arc detection using a novel algorithm. In the current paper, the concept is validated by showcasing...