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Fieback, M. (author), Münch, Christopher (author), Gebregiorgis, A.B. (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Tahoori, Mehdi (author)Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today’s research. They offer promising alternative computing architectures such as computation-in-memory (CiM) to reduce the transfer overhead between CPU and memory, usually referred to as the...conference paper 2022
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus, understanding the defects in MTJs and their faulty behaviors are paramount for developing high-quality test solutions. This article applies the advanced device-aware test to...journal article 2022
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Singh, A. (author), Zahedi, M.Z. (author), Shahroodi, Taha (author), Gupta, Mohit (author), Gebregiorgis, A.B. (author), Komalan, Manu (author), Joshi, R.V. (author), Catthoor, Francky (author), Bishnoi, R.K. (author), Hamdioui, S. (author)Spin-transfer torque magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for an energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing...conference paper 2022
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Wu, L. (author)As STT-MRAM mass production and deployment in industry is around the corner, high-quality yet cost-efficient manufacturing test solutions are crucial to ensure the required quality of products being shipped to end customers. This dissertation focuses on STT-MRAM testing, covering three abstraction levels: manufacturing defects, fault models, and...doctoral thesis 2021