A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...

Thermal-mechanical-electrical Co-design of Fan-Out Panel-Level SiC MOSFET Packaging with a Multi-objective Optimization Algorithm

As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this...

System level reliability assessment for high power light-emitting diode lamp based on a Bayesian network method

The increased system complexity in electronic products brings challenges in a system level reliability assessment and lifetime estimation. Traditionally, the graph model-based reliability block diagrams (RBD) and fault tree analysis (FTA) have been used to assess the reliability of products and systems. However, these methods are based on...

Random voids generation and effect of thermal shock load on mechanical reliability of light-emitting diode flip chip solder joints

To make the light-emitting diode (LED) more compact and effective, the flip chip solder joint is recommended in LED chip-scale packaging (CSP) with critical functions in mechanical support, heat dissipation, and electrical conductivity. However, the generation of voids always challenges the mechanical strength, thermal stability, and...