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Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...
journal article 2021
document
Taouil, M. (author)
3D stacking is an emerging technology promising many benefits such as low latency between stacked dies, reduced power consumption, high bandwidth communication, improved form factor and package volume density, heterogeneous integration, and low-cost manufacturing. However, it requires modification of existing methods and/or introduction of new...
doctoral thesis 2014