Reactive Magnetron Sputter Deposition of Superconducting Niobium Titanium Nitride Thin Films with Different Target Sizes

The superconducting critical temperature (T-\mathrm{c} > 15 K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multipixel imaging with advanced detectors. The drive for large-scale detector microchips is demanding NbTiN films with uniform properties over an...

Contribution of dielectrics to frequency and noise of NbTiN superconducting resonators

We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is...

Monocrystalline NbN nanofilms on a 3C-SiC/Si substrate

The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4...

Electrically detected ferromagnetic resonance

We study the magnetoresistance properties of thin ferromagnetic CrO2 and Fe3O4 films under microwave irradiation. Both the sheet resistance ? and the Hall voltage VHall characteristically change when a ferromagnetic resonance (FMR) occurs in the film. The electrically detected ferromagnetic resonance (EDFMR) signals closely match the...

IF impedance and mixer gain of NbN hot electron bolometers

The intermediate frequency (IF) characteristics, the frequency dependent IF impedance, and the mixer conversion gain of a small area hot electron bolometer (HEB) have been measured and modeled. The device used is a twin slot antenna coupled NbN HEB mixer with a bridge area of 1×0.15??m2, and a critical temperature of 8.3?K. In the experiment the...

Current-induced vortex unbinding in bolometer mixers

We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both...

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we...

Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...