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Corley-Wiciak, Cedric (author), Richter, Carsten (author), Zoellner, Marvin H. (author), Zaitsev, Ignatii (author), Manganelli, Costanza L. (author), Hendrickx, N.W. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author)A strained Ge quantum well, grown on a SiGe/Si virtual substrate and hosting two electrostatically defined hole spin qubits, is nondestructively investigated by synchrotron-based scanning X-ray diffraction microscopy to determine all its Bravais lattice parameters. This allows rendering the three-dimensional spatial dependence of the six...journal article 2023
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Abbas, Yawar (author), Ansari, Sumayya M. (author), Taha, Inas (author), Abunahla, H.N. (author), Khan, Muhammad Umair (author), Rezeq, Moh'd (author), Aldosari, Haila M. (author), Mohammad, Baker (author)Recently, phase change chalcogenides, such as monochalcogenides, are reported as switching materials for conduction-bridge-based memristors. However, the switching mechanism focused on the formation and rupture of an Ag filament during the SET and RESET, neglecting the contributions of the phase change phenomenon and the distribution and re...journal article 2023
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Lawrie, W.I.L. (author)Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si...doctoral thesis 2022
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Tosato, A. (author), Ferrari, B.M. (author), Sammak, A. (author), Hamilton, Alexander R. (author), Veldhorst, M. (author), Virgilio, Michele (author), Scappucci, G. (author)A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of ...journal article 2022
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Yi, H. (author), Öztürk, E. (author), Koelink, Marco (author), Krimmling, Jana (author), Damian, Andrei A. (author), Debski, Wojciech (author), van Zeijl, H.W. (author), Zhang, Kouchi (author), Poelma, René H. (author)High-performance IC-to-antenna interconnection is one of the key enablers for the mass production of high-end millimeter wave (mmW) radar systems above 100 GHz. In this work, a radar system with an on-package antenna array working at 122 GHz is presented. The antenna is placed on top of the molded package and the antenna-to-chip interconnection...journal article 2022
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de Vrijer, T. (author), van Nijen, D.A. (author), Parasramka, Harsh (author), Procel Moya, P.A. (author), Zhao, Y. (author), Isabella, O. (author), Smets, A.H.M. (author)Two terminal multi-junction (MJ) photovoltaic (PV) devices are well established concepts to increase the solar-to-electrical power conversion in reference to single PV junctions. In multi-junction PV devices two consecutive sub-cells are interconnected using a tunnel recombination junction (TRJ) in which the light excited holes of one sub...journal article 2022
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de Vrijer, T. (author), Bouazzata, Bilal (author), Smets, A.H.M. (author)Semiconductors based on group IV elements are widely used in the fields of micro-electronics, optics and photonics. The group IV alloys are processed using plasma enhanced chemical vapor deposition and its opto-electrical properties are a result of the material composition and structure. Infrared and Raman spectroscopy are complementary and...journal article 2022
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de Vrijer, T. (author), Smets, A.H.M. (author)In this abstract an overview is presented of research performed in the DISCO project, on the development of a silicon-based high voltage multijunction device for autonomous solar to fuel applications.'conference paper 2022
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de Vrijer, T. (author), van Dingen, Julian E.C. (author), Roelandschap, Paul J. (author), Roodenburg, Koos (author), Smets, A.H.M. (author)Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, opto-electronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature...journal article 2022
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de Vrijer, T. (author), Roodenburg, Koos (author), Saitta, F.S. (author), Blackstone, Thijs (author), Limodio, G. (author), Smets, A.H.M. (author)An alloy based on the group IV elements germanium and tin has the potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in the fields of micro-electronics, optics, photonics and photovoltaics. In this work, the first steps towards the plasma enhanced chemical vapour deposition (PECVD) processing of a...journal article 2022
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Blaauw, Menno (author), D’Agostino, Giancarlo (author), di Luzio, Marco (author), Dung, Ho Manh (author), Jacimovic, Radojko (author), Da Silva Dias, Mauro (author), Semmler, Renato (author), van Sluijs, Robbert (author), Barradas, Nuno Pessoa (author)In order to establish the variation between results in mass fractions due to software implementation, as measured by the k<sub>0</sub>-method for INAA, the IAEA has organized a software intercomparison. A complete set of test spectra and associated information was assembled. Efficiency curves, neutron spectrum parameters, correction factors...journal article 2022
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de Vrijer, T. (author), Bouazzata, Bilal (author), Ravichandran, Ashwath (author), van Dingen, Julian E.C. (author), Roelandschap, Paul J. (author), Roodenburg, Koos (author), Roerink, Steven J. (author), Saitta, F.S. (author), Blackstone, Thijs (author), Smets, A.H.M. (author)In this paper the opto-electrical nature of hydrogenated group IV alloys with optical bandgap energies ranging from 1.0 eV up to 2.3 eV are studied. The fundamental physical principles that determine the relation between the bandgap and the structural characteristics such as material density, elemental composition, void fraction and...journal article 2022
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Justino de Lima, C.L. (author), Veer, F.A. (author), Šavija, B. (author), Cassanjes, Fabia Castro (author), Poirier, Gael Y. (author)Whilst the optical and structural properties of the glasses containing tantalum oxide have been considerably investigated, research into their mechanical properties is not substantially established. This work reports on the mechanical characterization of transparent germanate glass samples, obtained via the melt-quenching technique, with a molar...journal article 2022
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Hendrickx, N.W. (author)Spin quantum bits (qubits) defined in semiconductor quantum dots have emerged as a promising platform for quantum information processing. Various semiconductor materials have been studied as a host for the spin qubit. Over the last decade, research focussed on the group‐IV semiconductor silicon, owing to its compatibility with semiconductor...doctoral thesis 2021
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Lodari, M. (author), Hendrickx, N.W. (author), Lawrie, W.I.L. (author), Hsiao, T. (author), Vandersypen, L.M.K. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author)We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very...journal article 2021
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Rossi, Alessandro (author), Hendrickx, N.W. (author), Sammak, A. (author), Veldhorst, M. (author), Scappucci, G. (author), Kataoka, Masaya (author)Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of...journal article 2021
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de Vrijer, T. (author), Ravichandran, Ashwath (author), Bouazzata, Bilal (author), Smets, A.H.M. (author)Low-cost multijunction photovoltaic devices are the next step in the solar energy revolution. Adding a bottom junction with a low bandgap energy material through plasma enhanced chemical vapor deposition (PECVD) processing could potentially provide a low-cost boost in conversion efficiency. A logical candidate for this low bandgap material is...journal article 2021
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Lawrie, W.I.L. (author), Hendrickx, N.W. (author), van Riggelen, F. (author), Russ, M.F. (author), Petit, L. (author), Sammak, A. (author), Scappucci, G. (author), Veldhorst, M. (author)We investigate hole spin relaxation in the single- and multihole regime in a 2 × 2 germanium quantum dot array. We find spin relaxation times T1 as high as 32 and 1.2 ms for quantum dots with single- and five-hole occupations, respectively, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate qubit...journal article 2020
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Sammak, A. (author), Sabbagh, D. (author), Hendrickx, N.W. (author), Lodari, M. (author), Paquelet Wuetz, Brian (author), Tosato, A. (author), Yeoh, L.A. (author), Veldhorst, M. (author), Scappucci, G. (author)Buried-channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high...journal article 2019
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Si, F.T. (author), Isabella, O. (author), Zeman, M. (author)Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field. Bandgap grading of n-SiOx:H is designed...journal article 2017
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