An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely limited by the cleanness of the epitaxial reactor...

On the uniformity of pure-boron-layer depositions

In this paper, the uniformity of PureB-layers deposited on photodiode surfaces of a segmented photodetector is investigated and discussed. Low-energy E-beam (LEEB) measurements have been carried out to study the uniformity and PureB-layer thickness variations over the anode surface area. It can be conclude that the PureB-layer is thinner in the...