Interdigitated-back-contacted silicon heterojunction solar cells featuring novel MoO_x-based contact stacks

The fabrication process of interdigitated-back-contacted silicon heterojunction (IBC-SHJ) solar cells has been significantly simplified with the development of the so-called tunnel-IBC architecture. This architecture utilizes a highly conductive (p)-type nanocrystalline silicon (nc-Si:H) layer deposited over the full substrate area comprising...

Ultra-thin electron collectors based on nc-Si:H for high-efficiency silicon heterojunction solar cells

Low parasitic absorption and high conductivity enable (n)-type hydrogenated nanocrystalline silicon [(n)nc-Si:H], eventually alloyed with oxygen [(n)nc-SiO_x:H], to be deployed as window layer in high-efficiency silicon heterojunction (SHJ) solar cells. Besides the appropriate opto-electrical properties of these nanocrystalline...

Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO_x passivating contacts solar cells

Molybdenum oxide (MoO_x) is attractive for applications as hole-selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoO_x stacked on intrinsic amorphous silicon (i)a-Si:H layer usually exhibits some issues that are still not fully...

Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoOxpassivating contacts solar cells

Electrical simulations show that the dipole formed at (i)a-Si:H/MoOx interface can explain electrical performance degradation. We experimentally manipulate this interface by a plasma treatment (PT) to mitigate the dipole strength without harming the optical response. The optimal PT + MoOx stack results in strongly improved electrical...