A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

Journal article (2014)

Authors

M.J. Lee

J.S. Youn

K.Y. Park

W.Y. Choi

Department

Microelectronics () (TU Delft)

DOI: https://doi.org/doi:10.1364/OE.22.002511

Silicon Optoelectronics Optical devices Photodiodes Avalanche photodiodes (APDs) Photodetectors Integrated optoelectronic circuits Optical interconnects

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Published Date

29-01-2014

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Source:

Optics Express, 22 (3), 2014

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Abstract

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

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