Terahertz gain on shallow donor transitions in silicon

Terahertz gain on shallow donor transitions in silicon

Zhukavin, R.K.
Shastin, V.N.
Pavlov, S.G.
Hübers, H.W.
Hovenier, J.N.
Klaassen, T.O.
Van der Meer, A.F.G.

Applied Sciences

Kavli Institute of Nanoscience

2007-11-07

Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0?1s(E), 2p0?1s(T2) transitions in Si:P and the 2p±?1s(E) transition in Si:Bi. Pumping with a CO2 laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0?1s(T2) of Si:P transition. The gain for intracenter pumping is in the range 5?10?cm?1 while for photoexcitation the gain is considerably less, namely ? 0.5?cm?1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations.

bismuth
elemental semiconductors
phosphorus
semiconductor lasers
silicon

http://resolver.tudelft.nl/uuid:288ec7d2-a3e9-4eb3-b388-5f8ccd9bb044

https://doi.org/10.1063/1.2804756

American Institute of Physics

0021-8979

http://link.aip.org/link/JAPIAU/v102/i9/p093104/s1

Journal of Applied Physics, 102 (9), 2007

Institutional Repository

journal article

(c) 2007 The Author(s); American Institute of Physics