Terahertz gain on shallow donor transitions in silicon

Journal article (2007)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2007 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.2804756
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Published Date

07-11-2007

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Source:

Journal of Applied Physics, 102 (9), 2007

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p0 or 2p± states of the P and Bi Coulomb centers, and the gain was determined for the 2p0?1s(E), 2p0?1s(T2) transitions in Si:P and the 2p±?1s(E) transition in Si:Bi. Pumping with a CO2 laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p0?1s(T2) of Si:P transition. The gain for intracenter pumping is in the range 5?10?cm?1 while for photoexcitation the gain is considerably less, namely ? 0.5?cm?1. The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations.

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