Engineering the quantum point contact response to single-electron charging in a few-electron quantum-dot circuit

Journal article (2004)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2004 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.1790605
Poisson equation Aluminium compounds III-V semiconductors Semiconductor quantum dots Gallium arsenide Quantum point contacts Semiconductor device models Single electron devices
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Published Date

27-09-2004

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Source:

Applied Physics Letters, 85 (13), 2004

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v85/i13/p2628/s1

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

We show that the design of a quantum point contact adjacent to a quantum dot can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot. Our analysis is based on the self-consistent solution of coupled three-dimensional Kohn-Sham and Poisson equations for the quantum circuit. We predict a detection sensitivity increase by at least 73% over the conventional design.

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