Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

Journal article (2006)
Copyright: © 2006 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.2221876
Silicon Energy gap Elemental semiconductors Amorphous semiconductors Valence bands Conduction bands Hydrogen, Deep level transient spectroscopy Electron beam effects Defect states
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Published Date

14-07-2006

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Source:

Applied Physics Letters, 89 (2), 2006

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v89/i2/p022119/s1

Abstract

We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for a-Si:H which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail.

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