Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation

Journal article (2002)

Authors

V.N. Shastin

R.K. Zhukavin

A.F.G. Van der Meer

E.E. Orlova

S.G. Pavlov

M.H. Rümmeli

H.W. Hübers

J.N. Hovenier

T.O. Klaassen

H. Riemann

I.V. Bradley

Department

Kavli Institute of Nanoscience () (TU Delft)

DOI: https://doi.org/doi:10.1063/1.1476955

Silicon Phosphorus Optical pumping Elemental semiconductors Impurity states Stimulated emission Bismuth

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Published Date

13-05-2002

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Source:

Applied Physics Letters, 80 (19), 2002

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude below the value for photoionization pumping. The influence of nonequilibrium intervalley TO phonons on the population of excited Bi impurity states is discussed.

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