Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

Journal article (2004)

Authors

A.F. Stassen

R.W.I. De Boer

N.N. Iosad

A.F. Morpurgo

Department

Kavli Institute of Nanoscience () (TU Delft)

DOI: https://doi.org/doi:10.1063/1.1812368

Permittivity Alumina Silicon compounds Organic semiconductors Dielectric materials Field effect transistors Hole mobility Semiconductor-insulator boundaries

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Published Date

25-10-2004

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Source:

Applied Physics Letters, 85 (17), 2004

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to ??1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.

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