Solid-phase crystallization of ultra high growth rate amorphous silicon films

Journal article (2012)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.4717951
Crystallisation Silicon Grain size Elemental semiconductors Plasma materials processing
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Published Date

18-05-2012

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Source:

Journal of Applied Physics, 111 (10), 2012

ISSN:

0021-8979

Source:

http://jap.aip.org/resource/1/japiau/v111/i10/p103510_s1

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development.

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