Buckling beam micromechanical memory with on-chip readout

Journal article (2009)
Department
Precision and Microsystems Engineering (Mechanical, Maritime and Materials Engineering) (TU Delft)
Copyright: © 2009 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3129195
Capacitance Compressive strength Buckling Electrostatics Micromechanical devices Beams (structures)
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Published Date

04-05-2009

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Source:

Applied Physics Letters, 94 (18), 2009

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v94/i18/p183501/s1

Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Abstract

We have used double clamped beams to implement a mechanical memory. Compressive stress is generated by resistive heating of the beams and beyond the buckling limit the bistable regime is accessed. Bits are written by applying lateral electrostatic forces. The state of the beam is read out by measuring the capacitance between beam and electrodes. Two ways to implement a mechanical memory are discussed: compensation of initial beam imperfections and snap through of the postbuckled beam. Although significant relaxation effects are observed, both methods prove reliable over thousands of write cycles.