Characterization of a photonic strain sensor in silicon-on-insulator technology

Journal article (2012)
Faculty
Applied Sciences (AS) (TU Delft)
Copyright: © 2012 Optical Society of America
DOI: https://doi.org/doi:10.1364/OL.37.000479
Optomechanics Experimental physics Semiconductor materials Optical sensing and sensors Acousto-optical materials Wavelength filtering devices
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Published Date

06-02-2012

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Source:

Optics Letters, 37 (4), 2012

ISSN:

0146-9592

Source:

http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-4-479

Faculty

Applied Sciences

Abstract

Recently there has been growing interest in sensing by means of optical microring resonators in photonic integrated circuits that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. [Proc. SPIE6619, 661914 (2007)PSISDG0277-786X10.1117/12.738412] proposed the use of a silicon-waveguide-based ring resonator as a strain gauge. However, the strong lateral confinement of the light in SOI waveguides and its corresponding modal dispersion where not taken into account. We present a theoretical understanding, as well as experimental results, of strain applied on waveguide-based microresonators, and find that the following effects play important roles: elongation of the racetrack length, modal dispersion of the waveguide, and the strain-induced change in effective refractive index.

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