Single-photon imaging in CMOS

Conference paper (2010)

Authors

Department
Microelectronics (EEMCS) (TU Delft)
Copyright: ©2010 Charbon, E.
DOI: https://doi.org/doi:10.1117/12.862371
Single-photon avalanche diode, avalanche photodiode, complementary metal-oxide semiconductor, SPAD, APD, CMOS
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Published Date

31-12-2010

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Source:

Proceedings of SPIE, 2010 vol. 7780

ISSN:

0277-786X

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Abstract

We report on the architectural design and fabrication of medium and large arrays of single-photon avalanche diodes (SPADs) for a variety of applications in physics, medicine, and the life sciences. Due to dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. This paper describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization.

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