A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

Journal article (2012)
Department
Microelectronics (EEMCS) (TU Delft)
Copyright: © 2012 Optical Society of America
DOI: https://doi.org/doi:10.1364/OE.20.005849
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Published Date

27-02-2012

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Source:

Optics Express, 20 (6), 2012

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Abstract

We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/?m2, at an excess bias of 4V when we measure 10 ?m diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.

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