Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability

Journal article (2009)
Department
Precision and Microsystems Engineering (Mechanical, Maritime and Materials Engineering) (TU Delft)
Copyright: © 2009 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3148774
Silicon Nanostructured materials Young's modulus Elemental semiconductors
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Published Date

02-06-2009

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Source:

Applied Physics Letters, 94 (22), 2009

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v94/i22/p221903/s1

Faculty

Mechanical, Maritime and Materials Engineering

Department

Precision and Microsystems Engineering

Abstract

This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young’s Modulus ? ( ~170–70?GPa) of [110] silicon nanocantilevers (thickness ~1019–40?nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems behaviors. The ? is retrieved from the pull-in voltage of the structure via the electromechanical coupled equation, with a typical error of ? 12%, much less than previous work in the field. Measurement results show a strong size-dependence of ?. The approach is simple and reproducible for various dimensions and can be extended to the characterization of nanobeams and nanowires.