Print Email Facebook Twitter Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces Title Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces Author Perinetti, U. Akopian, N. Samsonenko, Y.B. Bouravleuv, A.D. Cirlin, G.E. Zwiller, V. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2009-04-24 Abstract We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime measurements reveal an exciton lifetime of 500 ps. Polarization measurements show an exciton fine structure splitting of 15??eV and allow to identify the exciton and charged exciton transitions with linewidth as narrow as 23??eV. Subject excitonsfine structureIII-V semiconductorsindium compoundsmonolayersphotoluminescencesemiconductor quantum dots To reference this document use: http://resolver.tudelft.nl/uuid:f1d9367b-3600-4f47-b1f0-5cf2b9e0071a DOI https://doi.org/10.1063/1.3125430 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v94/i16/p163114/s1 Source Applied Physics Letters, 94 (16), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Perinetti_2009.pdf 151.41 KB Close viewer /islandora/object/uuid:f1d9367b-3600-4f47-b1f0-5cf2b9e0071a/datastream/OBJ/view