Model for nanopillar growth by focused helium ion-beam-induced deposition

Journal article (2010)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: © 2010 American Vacuum Society
He Nanostructured materials Monte Carlo methods Ion beam assisted deposition Platinum compounds (CH3)3Pt(CPCH3) Nanofabrication, PtC
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Published Date

01-12-2010

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Source:

Journal of Vacuum Science & Technology B, 28 (6), 2010

ISSN:

1071-1023

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral growth is induced by scattered ions and type-2 secondary ions. An essential element of the model is the notion that depletion of adsorbed precursor molecules occurs only at the pillars’ apex. Depletion impedes vertical growth at the apex, allowing more time for lateral outgrowth of the pillar’s sidewalls. The model describes qualitatively the trends in measured vertical, lateral, and volumetric growth rates of PtC pillars as functions of the ion-beam current. It can be used to design growth experiments and Monte Carlo simulations.

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