Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Journal article (2010)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2010 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3458783
Silicon MOSFET Elemental semiconductors Ion beam effects
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Published Date

30-06-2010

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Source:

Applied Physics Letters, 97 (26), 2010

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v96/i26/p264102/s1

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.