Nanopipes in GaN

Photo-etching and TEM study

Journal article (2004)
Department
kavli institute of nanoscience (AS) (TU Delft)
Copyright: Zandbergen, H.W.
DOI: https://doi.org/doi:10.1051/epjap:2004047
More Info
expand_more

Published Date

01-09-2004

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Source:

The European Physical Journal - Applied Physics, 27 (1-3) 2004

Faculty

Applied Sciences

Department

kavli institute of nanoscience

Abstract

Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.

Files

Apd1081.pdf
(pdf | 0.767 Mb)