Position-controlled [100] InP nanowire arrays

Journal article (2012)
Department
QN/Quantum Nanoscience (AS) (TU Delft)
Copyright: American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3679136
Transmission electron microscopy Scanning electron microscopy Nanowires Nanofabrication Electron beam lithography Photoluminescence Indium compounds Arrays Etching, III-V semiconductors Micro-optics MOCVD Semiconductor growth Vapour phase epitaxial growth
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Published Date

30-01-2012

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Source:

Applied Physics Letters, 100 (5), 2012

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/doi/10.1063/1.3679136

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.