Reliability study of the Floating Gate Based Embedded Non?Volatile Memory (eNVM)

Master thesis (2010)

Authors

Contributors

L. Nanver (mentor)
G. Tao (mentor)
Department
Microelectronics & Computer Engineering (EEMCS) (TU Delft)
Copyright: © 2010 Yang, J.
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Published Date

01-04-2010

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics & Computer Engineering

Abstract

The task of this project is to investigate the reliability aspects of NXP 2T?FNFN?NOR embedded non?volatile memories (eNVM). The structure of the memory cell is presented and its principle of operations is described. The reliability aspects (mainly endurance & retention) of the floating gate memory cell are inspected. Methods are presented to extract important parameters related to this eNVM. A new influence (charge transport in the nitride) on VT instability is addressed.