2D InP photonic crystal fabrication process development

Conference paper (2006)

Authors

B. Rong

E. Van der Drift

H.W.M. Salemink

Department

Kavli Institute of Nanoscience () (TU Delft)

2D Nanotechnology High aspect ratio Nanofabrication Photonic crystal Nanophotonics Gratings Nanophotonic crystal III-V photonic crystal InP nanophotonic crystal Hole and pillar Cl2+N2 plasma

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Published Date

29-08-2006

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Source:

Proceedings of SPIE, 2006 vol. 6327

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectric column radius of 120 nm. Large efforts have been devoted on developing a proper mask. We obtained a perfect, clean and vertical profiled SiNX mask. The next main effort is InP pattern transfer in Cl2+N2 plasma. Etching selectivity, smooth sidewall and etch profile are directly related to plasma process condition, besides the quality of SiNX mask. We have optimized the N2+Cl2 plasma condition to obtain high aspect ratio, vertical profile and smooth sidewall InP structures. Cylindrical holes (2 micron depth) and rodlike pillars (2.4 micron height) are uniformly fabricated. An aspect ratio of 18 for 100nm trench lines has been obtained. AFM measurement evidences that etched surfaces are smooth. The root mean square roughness of pillar and hole is 0.7 nm and 0.8 nm, respectively. The optical transmission characterization of ridge waveguides has been carried out. Transmission spectrum of 1 micron wide waveguide has been obtained.

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