On the effects of implantation temperature in helium implanted silicon

Journal article (2002)
Department
Radiation, Radionuclides and Reactors (AS) (TU Delft)
Copyright: © 2002 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.1525059
Transmission electron microscopy Ion implantation Elemental semiconductors Voids (solid) Silicon, helium Thermally stimulated desorption
More Info
expand_more

Published Date

25-11-2002

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Source:

Applied Physics Letters, 81 (22), 2002

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v81/i22/p4201/s1

Faculty

Applied Sciences

Department

Radiation, Radionuclides and Reactors

Abstract

He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation temperature. However, it is found that helium release from cavities is governed by a single mechanism regardless of the implantation temperature.

Files

VanVeen_2002.pdf
(pdf | 0.154 Mb)