A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized Row Selector

Journal article (2009)

Authors

Y. Chen

X. Wang

A.J. Mierop

A.J.P. Theuwissen

Department

Electronic Instrumentation Laboratory () (TU Delft)

DOI: https://doi.org/doi:10.1109/TED.2009.2030600

Buried-channel source follower (BSF) CMOS image sensor (CIS) Optimized row selector Random-telegraphsignal (RTS) noise 4T-active-pixel sensor

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Published Date

20-10-2009

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Source:

IEEE Transactions on Electron Devices, 56 (11), 2009

ISSN:

0018-9383

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electronic Instrumentation Laboratory

Abstract

This paper presents a CMOS imager sensor with pinned-photodiode 4T active pixels which use in-pixel buried-channel source followers (SFs) and optimized row selectors. The test sensor has been fabricated in a 0.18-mum CMOS process. The sensor characterization was carried out successfully, and the results show that, compared with a regular imager with the standard nMOS transistor surface-mode SF, the new pixel structure reduces dark random noise by 50% and improves the output swing by almost 100% without any conflicts to the signal readout operation of the pixels. Furthermore, the new pixel structure is able to drastically minimize in-pixel random-telegraph-signal noise.

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