Spin-torque transistor

Journal article (2003)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2003 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.1579122
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Published Date

02-06-2003

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Source:

Applied Physics Letters, 82 (22), 2003

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

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