Gate-Tunable Kinetic Inductance in Proximitized Nanowires

Journal article (2022)

Authors

L.J. Splitthoff QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
A. Bargerbos Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
L. Grünhaupt Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Marta Pita-Vidal QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
J.J. Wesdorp QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Kavli institute of nanoscience Delft, QuTech Advanced Research Centre
Yu Liu University of Copenhagen
Angela Kou University of Illinois at Urbana Champaign
C.K. Andersen Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, Andersen Lab - AS
B. van Heck Universiteit Leiden
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2022 L.J. Splitthoff, A. Bargerbos, L. Grünhaupt, Marta Pita-Vidal, J.J. Wesdorp, Yu Liu, Angela Kou, C.K. Andersen, B. van Heck
DOI: https://doi.org/10.1103/PhysRevApplied.18.024074
More Info
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Published Date

2022

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we embed the nanowire into a quarter-wave coplanar waveguide resonator and measure the resonance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal-state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a useful tool for gate-controlled superconducting electronics.