V

V Nadazdy

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13 records found

Improvement of material properties by employing external RF substrate bias during a-Si:H deposition by a remote expending thermal plasma

Improvement of expanding thermal plasma amorphous silicon solar cell by means of substrate RF-biasing

Status report of the EET HELIANTHOS project

Status report of the EET HELIANTHOS project 2

Origin of charged gap states in a-Si:H and their evolution during light soaking
Journal article - V Nadazdy, M. Zeman

Evolution of chatged gap states in a-Si:H under light exposure

Towards understanding of light-induced degradation in a-Si:H cells
Conference paper - M. Zeman, V Nadazdy, JW Metselaar

Photoluminescence properties of a-Si:H based thin films and corresponding solar cells

Defect States in Excimer-Laser Crystallized Single-Grain TFTs Studied with Isothermal Charge Deep-level Transient Spectroscopy

Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles

The role of charged gap states in light-induced degradation of single-junction a-Si:H solar cells
Conference paper - M. Zeman, V Nadazdy, JW Metselaar

Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon

Role charged defects in the light-induced degradation of single junction a-Si:H solar cells