JC
Joris More Chevalier
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1
Journal article
(2025)
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Petr Hruška, Stephan W.H. Eijt, Henk Schut, František Lukáč, Jakub Čížek, Joris More Chevalier, Stanislav Cichoň, Martin Vondráček, Ladislav Fekete, More authors...
In this study, the deposition, annealing process, and oxidation properties of HfNbTaTiZr high-entropy alloy thin films were thoroughly investigated. The films, approximately 250 nm thick, were deposited on MgO substrates by DC magnetron sputtering using a single target. The preparation temperature was identified as a key factor influencing the resulting structure. Amorphous films formed at room temperature, whereas nanocrystalline films, characterized by multiple intermetallic phases, were obtained either by deposition at elevated temperatures (600 °C – 750 °C) or through in situ annealing of amorphous films (600 °C – 700 °C). Positron annihilation spectroscopy revealed that nanocrystalline films predominantly contain vacancy-like misfit defects, with concentration decreasing as the preparation temperature increases. Additionally, amorphous films exhibited a high concentration of large vacancy clusters. X-ray photoelectron spectroscopy showed greater oxygen absorption in amorphous films due to their defective structure, with preferential oxidation of Zr and Hf. Further annealing of naturally oxidized films in a vacuum at temperatures up to 1400 °C led to films' recrystallization and eventually the formation of complex oxides, including ZrO2, HfO2, and various Mg-containing oxides, indicating a reaction with the MgO substrate. This work demonstrates the ability to fine-tune the microstructure and defect characteristics of high-entropy alloy films and highlights their direct correlation with oxidation properties.
...
In this study, the deposition, annealing process, and oxidation properties of HfNbTaTiZr high-entropy alloy thin films were thoroughly investigated. The films, approximately 250 nm thick, were deposited on MgO substrates by DC magnetron sputtering using a single target. The preparation temperature was identified as a key factor influencing the resulting structure. Amorphous films formed at room temperature, whereas nanocrystalline films, characterized by multiple intermetallic phases, were obtained either by deposition at elevated temperatures (600 °C – 750 °C) or through in situ annealing of amorphous films (600 °C – 700 °C). Positron annihilation spectroscopy revealed that nanocrystalline films predominantly contain vacancy-like misfit defects, with concentration decreasing as the preparation temperature increases. Additionally, amorphous films exhibited a high concentration of large vacancy clusters. X-ray photoelectron spectroscopy showed greater oxygen absorption in amorphous films due to their defective structure, with preferential oxidation of Zr and Hf. Further annealing of naturally oxidized films in a vacuum at temperatures up to 1400 °C led to films' recrystallization and eventually the formation of complex oxides, including ZrO2, HfO2, and various Mg-containing oxides, indicating a reaction with the MgO substrate. This work demonstrates the ability to fine-tune the microstructure and defect characteristics of high-entropy alloy films and highlights their direct correlation with oxidation properties.