Improvement of material properties by employing external RF substrate bias during a-Si:H deposition by a remote expending thermal plasma

Improvement of expanding thermal plasma amorphous silicon solar cell by means of substrate RF-biasing

On the reproducibility of a-Si:H deposited with an expanding thermal plasma

Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Solar cells with intrinsic a-Si: H deposited at rates larger than 5 Å/s by the expanding thermal plasma