Lithium–sulfur (Li–S) batteries, renowned for their potential high energy density, have attracted attention due to their use of earth-abundant elements. However, a significant challenge lies in developing suitable materials for both lithium-based anodes, which are less prone to lithium dendrite formation, and sulfur-based cathodes. This obstacle has hindered their widespread commercial viability. In this study, we present a novel sulfur host material in the form of a two-dimensional semiconductor boron nitride framework, specifically the 2D orthorhombic diboron dinitride (o-B2N₂). The inherent conductivity of o-B2N₂ mitigates the insulating nature often observed in sulfur-based electrodes. Notably, the o-B2N₂ surface demonstrates a high binding affinity for long-chain Li-polysulfides, leading to a significant reduction in their dissolution into the DME/DOL electrolytes. Furthermore, the preferential deposition of Li2S on the o-B2N₂ surface expedites the kinetics of the lithium polysulfide redox reactions. Additionally, our investigations have revealed a catalytic mechanism on the o-B2N₂ surface, significantly reducing the free energy barriers for various sulfur reduction reactions. Consequently, the integration of o-B2N₂ as a host cathode material for Li–S batteries holds great promise in suppressing the shuttle effect of lithium polysulfides and ultimately enhancing the overall battery performance. This represents a practical advancement for the application of Li–S batteries.

Solar cells are expected to become one of the dominant electricity generation technologies in the coming decades. Developing high-performance absorbers made from thin materials is a promising pathway to improve efficiency and reduce cost, accelerating the widespread adoption of these photovoltaic cells. In the present work, we have systematically investigated the 2D MoSi₂N₄/Arsenene van der Waals (vdW) heterostructure, which exhibits a type-II band alignment with an indirect band gap semiconductor (1.58 eV), that can effectively separate the photogenerated electron–hole (e⁻–h⁺) pairs. Compared to the isolated MoSi₂N₄ and Arsenene monolayers, the optical absorption strength can be significantly enhanced in MoSi₂N₄/Arsenene vdW heterostructure (in the order of ∼10⁵ cm⁻¹ in the visible region). The calculated optical absorption gaps are 2.12 eV (Arsenene) and 1.76 eV (MoSi₂N₄), with excitonic binding energies of 0.05 eV for arsenene and 0.48 eV for MoSi₂N₄, indicating that both materials can effectively form excitons and separate charges. Moreover, we found a high spectroscopic limited maximum efficiency of 27.27% for the MoSi₂N₄/Arsenene vdW heterostructure, which is relatively higher compared to previously reported 2D heterostructures. Ab-initio molecular dynamics (AIMD) simulations at 300 K, 600 K, and 900 K were conducted to evaluate the thermal stability of the MoSi₂N₄/Arsenene heterostructure. Simulations in the presence of water and NO₂ at 300 K were also performed to assess its resilience to humidity and pollutants. The results suggest strong stability under harsh environmental conditions. Our findings demonstrate that the 2D MoSi₂N₄/Arsenene vdW heterostructure is an excellent candidate for both photovoltaic device applications and optoelectronic nanodevices.