Improved RSOL planar calibration via EM modelling and reduced spread resistive layers

SiGe heterojunction bipolar transistors with Schottky collector contacts

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Simple method to evaluate minority carrier injection levels in schottky diodes

Arbitrarily shallow arsenic deposited junctions on silicon tuned by excimer laser annealing

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Deep p+ junctions formed by drive-in from pure boron depositions

Chemical Vapor Deposition of Gallium on Silicon and SiO2

Analytical Carrier Transport Model for Arbitrarily Shallow p-n Junctions

Application of amorphous boron layer as diffusion barrier for pure aluminium

Evaluation of al-doped SPE ultrashallow P+N junctions for use as PNP SiGe HBT emitters

RF/microwave device fabrication in silicon-on-glass technology

Reduction of alloying temperature of metallization stacks containing Al/Ti/TiN from 400 to 300°C

Analytical carrier transport model for arbitrary shallow p-n junctions

SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

Special RF/microwave devices in silicon-on-glass technology

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Silicon-on-glass technology for RF and microwave device fabrication

Analysis of the base-collector junction breakdown voltage in silicon-on-glass bipolar transistors