PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Conductance along the interface formed by 400 °C pure boron deposition on silicon

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Fabrication of low dark-count PureB single-photon avalanche diodes

UV-sensitive low dark-count PureB single-photon avalanche diode

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

UV-sensitive low dark-count PureB single-photon avalanche diode

Reverse biasing and breakdown behavior of PureB diodes

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

A Ge-on-Si single photon avalanche diode operating in Geiger mode at infrared wavelengths

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region