Two-dimensional (2D) Janus monolayers, distinguished by their intrinsic vertical electric fields, emerge as highly efficient and eco-friendly materials for advancing the field of hydrogen evolution reactions (HER). In this study, we explore, for the first time, the potential viability of the oxygenation phase of two-dimensional Janus transition metal dichalcogenides MoOX (X = S, Se, and Te) monolayers as an exceptionally efficient photocatalyst for hydrogen production. Based on first-principles computations, we demonstrate that all three monolayers exhibit semiconductor behavior, characterized by a band gap ranging from 0.66 to 1.55 eV. This narrow band gap renders the proposed materials highly efficient at absorbing light within the visible region. Excitingly, the introduction of an electrostatic potential difference ΔΦ has granted us the ability to surpass the conventional bandgap limit (E_g≥1.23). Consequently, all monolayers exhibit favorable band alignment with respect to the vacuum level. Moreover, the calculated solar-to-hydrogen efficiency for the envisaged monolayer exceeds the established theoretical limit. Particularly, the MoOTe monolayer emerges as an infrared-light-driven photocatalyst, demonstrating a remarkable solar-to-hydrogen efficiency limit of up to 25,21% when considering the entire solar spectrum. A thorough examination of the Gibbs free energy differences across these monolayers has revealed that the values during the oxygenation phase are significantly smaller and approach the optimum, in contrast to the parental two-dimensional Janus transition metal dichalcogenides. Our results conclusively establish that the proposed materials exhibit exceptional efficiency as photocatalysts for hydrogen evolution reactions. Notably, their efficacy is demonstrated even in the lack of co-catalysts or sacrificial agents.

Through a density functional theory-driven survey, a comprehensive investigation of two-dimensional (2D) Janus aluminum-based monochalcogenides (Al₂XY with X/Y = S, Se, and Te) has been performed within this study. To begin with, it is established that the examined phase, in which the Al-atoms are located at the two inner planes while the (S, Se, and Te)-atoms occupy the two outer planes in the unit cell, are energetically, mechanically, dynamically, and thermally stable. To address the electronic and optical properties, the hybrid function HSE06 has been employed. It is at first revealed that all three monolayers display a semiconducting nature with an indirect band gap ranging from 1.82 to 2.79 eV with a refractive index greater than 1.5, which implies that they would be transparent materials. Furthermore, the monolayers feature strong absorption spectra of around 10⁵ cm⁻¹ within the visible and ultraviolet regions, suggesting their potential use in optoelectronic devices. Concerning the photocatalytic performance, the conduction band-edge positions straddle the hydrogen evolution reaction redox level. Also, it is observed that the computed Gibbs free energy is around 1.15 eV, which is lower and comparable to some recently reported 2D-based Janus monolayers. Additionally, the thermoelectric properties are further investigated and found to offer a large thermal power as well as a high figure of merit (ZT) around 1.03. The aforementioned results strongly suggest that the 2D Janus Al-based monochalcogenide exhibits suitable characteristics as a potential material for high-performance optoelectronic and thermoelectric applications.