The structural, optical and dc electrical properties of Mg _xAl_1-x (0.2 ≤ x ≤ 0.9) gradient thin films covered with Pd/Mg are investigated before and after exposure to hydrogen. We use hydrogenography, a novel high-throughput optical technique, to map simultaneously all the hydride forming compositions and the kinetics thereof in the gradient thin film. Metallic Mg in the Mg_xAl_1-x layer undergoes a metal-to-semiconductor transition and MgH₂ is formed for all Mg fractions x investigated. The presence of an amorphous Mg-Al phase in the thin film phase diagram enhances strongly the kinetics of hydrogenation. In the Al-rich part of the film, a complex H-induced segregation of MgH₂ and Al occurs. This uncommon large-scale segregation is evidenced by metal and hydrogen profiling using Rutherford backscattering spectrometry and resonant nuclear analysis based on the reaction ¹H(¹⁵N, αγ)¹²C. Besides MgH₂, an additional semiconducting phase is found by electrical conductivity measurements around an atomic [Al]/[Mg] ratio of 2 (x = 0.33). This suggests that the film is partially transformed into Mg(AlH₄)₂ at around this composition.

A new method has been developed to synthesize compact yttriumtrihydride by making use of a thin film technique. For electrical measurements yttrium films of typically 500 nm thickness are covered under UHV conditions by a 5 nm thick palladium overlayer which consists of electrically disconnected islands. Loading of these films with hydrogen up to the trihydride phase can then be done ex-situ in a reasonably short time (around 20-40 h) by applying gas pressures of about 60 × 10⁵ Pa. For a thicker Pd layer (above 20 nm) this time can be considerably shorter (t ∼ 125 s). The film morphology stays intact during the loading process although the film thickness increases by approximately 11% and the crystal structure changes from h.c.p. to f.c.c. and back to h.c.p. These samples are, therefore, very well suited for an investigation of the remarkable electrical and optical properties of trihydrides, as recently reported by Huiberts et al. (Nature, 380, 1996, 231). In this article we give evidence for the island structure of the palladium overlayer and make a comparison of a number of physical properties of yttrium and its related hydrides as thin films with literature values for the same material in bulk form. These properties include lattice parameters for the different hydride phases, electrical resistivity for yttrium and its dihydride and Hall coefficient for yttrium. The characteristics of the yttriumhydride thin films are very similar to those of bulk material. Furthermore, we performed concentration measurements and resistivity measurements during hydrogen loading. It is shown that the resistivity rises three orders of magnitude when yttrium is loaded up to the trihydride phase at 60 × 10⁵ Pa.