In this work, by combining an asymmetric Silicon immersion lens configuration and a complementary resonator design, far-field transmission measurement of a single subwavelength split-ring resonator, ultra-strongly coupled to inter Landau level transitions in a single quantum well, is resolved. The highest coupling is 60%, achieved for only 2000 coupled electrons for a single resonator on an InSb quantum well. This technique can be useful to characterize the complex conductivity of micron-sized samples, such as exfoliated graphene or transition metal dichalcogenide flakes, in the THz domain.

We probe ultrastrong light-matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high-mobility two-dimensional electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly nonparabolic bands, and compare our results to well-known parabolic AlGaAs/GaAs quantum well systems. Tuning the coupling strength of the system by two methods, lithographically and by optical pumping, we observe a behavior clearly deviating from the standard Hopfield model previously verified in cavity quantum electrodynamics: An opening of a lower polaritonic gap.