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Al mediated solid phase epitaxy of silicon on insulator

Conference paper - A. Sakic, Y Civale, L.K. Nanver, C Biasotto, V. Jovanovic

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Conference paper - V. Jovanovic, C Biasotto, G Mussler, J Stangl, G Bauer, J. van der Cingel, E Bonera, L.K. Nanver, J Moers, D Grutzmacher, J. Zhang, OG Schmidt, L Miglio, H Kosina, A Marzegalli, G Vastola

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

Journal article - C Biasotto, JA Diniz, AM Daltrini, SA Moshkalev, MJR Monteiro

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Conference paper - C Biasotto, V Gonda, L.K. Nanver, J. van der Cingel, V. Jovanovic

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article - V. Jovanovic, C Biasotto, OG Schmidt, L Miglio, L.K. Nanver, J Moers, D Gruetzmacher, J Gerharz, G Mussler, J. van der Cingel, J. Zhang, G Bauer

Application of Laser Annealing in the EU FP6 Project D-DotFET

Conference paper - L.K. Nanver, V. Jovanovic, C Biasotto, J. van der Cingel

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

Journal article - C Biasotto, AM Daltrini, RC Teixeira, FA Boscoli, JA Diniz, SA Moshkalev, I Doi

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Conference paper - C Biasotto, V. Jovanovic, L.K. Nanver, J. van der Cingel

Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Conference paper - M Popadic, L.K. Nanver, C Biasotto, V Gonda, J. van der Cingel

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET

Conference paper - C Biasotto, V. Jovanovic, V Gonda, J. van der Cingel, S. Milosavljevic, L.K. Nanver

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Journal article - C Biasotto, V Gonda, L.K. Nanver, T.L.M. Scholtes, J. van der Cingel, D Vidal, V. Jovanovic

Integration of MOSFETs with SiGe dots as stressor material

Journal article - L.K. Nanver, V. Jovanovic, L Miglio, H Kosina, A Marzegalli, G Vastola, G Mussler, J Stangl, G Bauer, J. van der Cingel, E Bonera, C Biasotto, J Moers, D Gruetzmacher, JJ Zhang, N Hrauda, M Stoffel, F Pezzoli, OG Schmidt

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

Journal article - N Hrauda, J. Zhang, L.K. Nanver, J Moers, D Grutzmacher, G Baur, E Wintersberger, T Etzelstorfer, B Mandl, J Stangl, D Carbone, V Holy, V. Jovanovic, C Biasotto

DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology

Doctoral thesis - C Biasotto

Investigation and characterization of silicon nitride thin films deposited by ECR-CVD plasma for Microelectromechanical systems application

Journal article - C Biasotto, JA Diniz, AM Daltrini, SA Moshkalyov, MJR Monteiro

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

Conference paper - V. Jovanovic, C Biasotto, G Bauer, OG Schmidt, L Miglio, L.K. Nanver, J Moers, D Grutzmacher, J Gerharz, G Mussler, J. van der Cingel, J Zhang, Z Jianjun

C Biasotto

Authored