Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

DotFETs: MOSFETs strained by a single SiGe dot in a low-temperature ELA technology

Integration of MOSFETs with SiGe dots as stressor material

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

Al mediated solid phase epitaxy of silicon on insulator

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Application of Laser Annealing in the EU FP6 Project D-DotFET

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Investigation and characterization of silicon nitride thin films deposited by ECR-CVD plasma for Microelectromechanical systems application

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma