Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits

Integrating low-temperature carbon nanotubes as vertical interconnects in Si technology

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits

Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths

Integrating carbon nanotubes as vias in a monolithic 3DIC process

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology

Integration of MOSFETs with SiGe dots as stressor material

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects

Excimer laser crystallization of thick a-Si for photodiode and solar cell applications

Patterned growth of carbon nanotubes for vertical interconnects in 3D integrated circuits

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Thermal budget considerations for excimer laser annealing of implanted dopants

Strained single grain silicon n- and p- channel thin-film transistors by excimer laser