Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

Towards the integration of carbon nanotubes as vias in monolithic three-dimensional integrated circuits

Integrating low-temperature carbon nanotubes as vertical interconnects in Si technology

Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits

Integrating carbon nanotubes as vias in a monolithic 3DIC process

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths

Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Integration of MOSFETs with SiGe dots as stressor material

Electrical characterisation of low temperature aligned carbon nanotubes for vertical interconnects

Strained single grain silicon n- and p- channel thin-film transistors by excimer laser

Thermal budget considerations for excimer laser annealing of implanted dopants

High performance single-grain Ge TFTs without seed substrate

Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Excimer laser crystallization of thick a-Si for photodiode and solar cell applications

MOSFETS on self assembled SiGe dots with strain-enhanced mobility

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity