Enhancing the hydrogen embrittlement (HE) resistance of alloys caters to the urgent needs of engineering safety and long-distance hydrogen transportation. Highly dense precipitates in the alloys act as H traps, however, some of them cannot strongly trap H thus failing to prevent its accumulation at the critical regions. Experimentally, it is challenging to expeditiously identify and generate phases causing strengthening and acting as strong H traps. Here, we demonstrate a computation-based design strategy to generate precipitates strongly trapping H. Based on the quantum machine learning Al-Sc-Cu potential, the optimal processing parameters of strong H trapping phases are determined, even though they are metastable in nature. Elemental mapping in electron microscope and atom probe tomography confirms the presence of Cu in Al₃Sc and its strong interaction with H. Hence, we envisage the proposed strategy will accelerate the design of HE-resistant microstructures of various technologically relevant materials via identification of desirable phases.

Prone H reduction is considered an important factor in the poor corrosion resistance of Mg and its alloys, while the reduced H simultaneously impacts their mechanical properties whose mechanism is still unclear. It can be experimentally found that the elongation of Mg charged with atomic H is 2.76 % greater than that in air. To reveal the underlying physics, multi-scale modeling combining first-principle calculation, molecular dynamic/static (MD/MS) simulation, and crystal plasticity finite element method (CPFEM) is first employed to elaborate the influence of H on Mg at different length scales. The first-principle results show that the Prism-I {101¯0} exhibits the most corrosive nature with an effective H adsorption density that reaches 18 nm⁻² and its diffusion barrier is only 0.156 eV H⁻¹. Conversely, the Basal {0001} has the best surficial H resistance. After H infiltration into the Mg matrix, the generalized stacking fault energies of most twining planes decrease by 2.26 % ∼18.49 %. Especially for the Basal {0001}, the H not only lowers its stacking fault energy to -7.13 J m⁻², but also impedes its cleavage cracking along [101¯0] according to the MD/MS simulation. The presence of H within the grains induces early initiation of stacking fault and elevates the critical stress at the crack tips. The CPFEM modeling reveals that the difference in twining growth is concentrated within 4 % strain. The H addition promotes the twining of Mg, however, following 4 % strain, the relative activity of planes in the Mg/Mg-H models is consistent.