Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride of PE-ALD titanium nitride for void-free bottom-up copper electroplating

Oxidized ALD-deposited titanium nitride films as a low-temperature alternative for enhancing the wettability of through-silicon vias

Front to back-side 3D interconnects fabrication process based on controlled cu electroplating of high aspect ratio through silicon vias (HAR-TSVs)

Improvement of wettability of silicon nitride in PECVD environment for copper electrodeposition in HAR vias

Local Sealing of High Aspect Ratio Vias for Single Step Bottom-up Copper Electroplating of Through Wafer Interconnects

Copper electroplating for 3D interconnects