Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions

Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Optimization of the perimeter doping of ultrashallow p+-n¿-n+ photodiodes

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

Ultra-high aspect ratio FinFet technology

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Analysis of subthreshold conduction in short channel recessed source/drain UTB SOI MOSFETs

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Suppression of corner effects in wide channel triple gate bulk finfets

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

FinFET Considerations for 0.18 um Technology