Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Silicon technology for integrating high-performance low-energy electron photodiode detector

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Series resistance optimization of high-sensitivity Si-based VUV photodiodes

Optimization of the perimeter doping of ultrashallow p+-n¿-n+ photodiodes

Al mediated solid phase epitaxy of silicon on insulator

Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Ultrashallow junction silicon photodiodes for detection of low energy electrons

Optical stability investigation of high performance silicon based VUV photodiodes

New solid state detector design for ultra sensitive back scattered electron detection

Silicon photodiodes for high-efficiency low-energy electron detection

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

The influence of stacking faults on the leakage current of b-layer p+n diodes