Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

High-efficiency silicon photodiode detector for sub-keV electron microscopy

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Silicon technology for integrating high-performance low-energy electron photodiode detector

Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Optimization of the perimeter doping of ultrashallow p+-n¿-n+ photodiodes

Series resistance optimization of high-sensitivity Si-based VUV photodiodes

Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Silicon photodiodes for high-efficiency low-energy electron detection

Ultrashallow junction silicon photodiodes for detection of low energy electrons

Pure boron chemical vapor deposited layers; A new material for silicon device processing

New solid state detector design for ultra sensitive back scattered electron detection

Al mediated solid phase epitaxy of silicon on insulator

Optical stability investigation of high performance silicon based VUV photodiodes

The influence of stacking faults on the leakage current of b-layer p+n diodes