21 records found
1
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions
High-efficiency silicon photodiode detector for sub-keV electron microscopy
Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization
Silicon technology for integrating high-performance low-energy electron photodiode detector
Modelling of electrical characteristics of ultrashallow pure amorphous boron p +n junctions
Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
Optimization of the perimeter doping of ultrashallow p+-n¿-n+ photodiodes
Series resistance optimization of high-sensitivity Si-based VUV photodiodes
Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
Characterization of amorphous boron layers as diffusion barrier for pure aluminium
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection
Silicon photodiodes for high-efficiency low-energy electron detection
Ultrashallow junction silicon photodiodes for detection of low energy electrons
Pure boron chemical vapor deposited layers; A new material for silicon device processing
New solid state detector design for ultra sensitive back scattered electron detection
Al mediated solid phase epitaxy of silicon on insulator
Optical stability investigation of high performance silicon based VUV photodiodes
The influence of stacking faults on the leakage current of b-layer p+n diodes