Memristors have emerged as prospective two-terminal elements, having applications in memory, neuromorphic systems, and analog circuits. Biological materials such as egg albumin exhibit memristive behavior, displaying a distinctive pinched hysteresis signature in their current-voltage characteristics. However, such memristive behavior must be mathematically modeled to gain insights into the material’s operation and utilize it in various circuit applications. This article proposes a novel SPICE-level framework for fabricated egg albumin memristors using Joglekar’s memristor model. Experimental current-voltage characteristics are used to calibrate the SPICE model, ensuring accurate reproducibility of the experimental results. Additionally, the impact of variations in model-specific parameters on dynamic resistance and device performance is explored.