This thesis deals with the dry etching of deep anisotropic microstructures in monocrystalline silicon by high-density plasmas. High aspect ratio trenches are necessary in the fabrication of sensitive inertial devices such as accellerometers and gyroscopes. The etching of silicon in fluorine-based plasmas is isotropic. To obtain anisotropy the addition of sidewall passivation is necessary. This is achieved with both oxygen passivation at low temperatures and fluorocarbon passivation at room temperature. A quantitative approach was pursued to explain the etching mechanism. The etch results were analysed using the measured plasma species fluxes and the surface composition. Moreover, the transport of the plasma species in narrow anisotropic structures is a fundamental factor determining the etch rate and the profile evolution. The experimental methods such as the etching equipment, plasma diagnostics, surface analysis and sample preparation are described in chapter 2. Three etching processes were investigated: the cryogenic etching process with oxygen passivation at low temperatures, the Bosch process with fluorocarbon passivation at room temperature and the novel triple pulse process that was developed in our laboratory. The polymer deposition mechanism and the characteristic role of the ions are also explained. The cryogenic etching process is discussed in chapter 3. Fluorine radicals, oxygen radicals and ion bombardment are responsible for the three main sub-processes, that is, etching, sidewall passivation and depassivation of the trench bottom, respectively. Etching experiments with an extremely low ion-to-radical flux ratio were used to reveal the etching mechanism. Crystal orientation dependent etching leading to Si(111) crystal facets is observed in a surface kinetics controlled regime. By varying the plasma conditions it is possible to adjust the etching mechanism from fluorine-limited to ion-limited. Controlled etching is obtained because the etching is tuned from aspect ratio dependent in the fluorine-limited domain to aspect ratio independent in the ion-limited domain. The transport of radicals in high aspect ratio trenches is an important limiting factor and was investigated with special structures. The etch results are described by an analytic model that is based on the surface site balance of fluorine and oxygen radicals. The results are further explained with a Monte Carlo simulation model. The Bosch process is clarified in chapter 4. The anisotropy of the etched structures is controlled by balancing the etching and passivation pulse. However, the maximal obtainable aspect ratio is limited by convergence of the trench sidewalls due to excessive passivation. The maximal obtainable aspect ratio increases if the ion-to-radical flux ratio increases. The transport of ions is an important limiting factor in the depassivation of the bottom of the trench. Divergence of the ion beam leads to a reduction of the ion flux, so that the fluorocarbon passivation is insufficiently removed near the base of the sidewalls. The average ion angle was measured and correlated to the maximal obtainable aspect ratio. The Bosch process was improved at the depassivation side with the triple pulse process and at the passivation side with preferential sidewall deposition. The triple pulse process that is described in chapter 5 has the aim to improve the depassivation in deep trenches. The three main sub-processes are decoupled using a separate depassivation pulse directly after the etching and passivation pulses. The fluorocarbon passivation is efficiently removed with low-pressure, high-density, oxygen-based plasmas. The investigated plasma chemistries include O2, CO2 and SO2. The triple pulse process leads to better profile control with a straight trench bottom. However, the maximal obtainable aspect ratio is comparable to the Bosch process because a larger etch depth and a small lateral etch cancel out. The polymer deposition mechanism is treated in chapter 6 with the aim to understand the fluorocarbon passivation in deep trenches. The deposition on plane surfaces and on special structures was investigated to distinguish between the radical-induced and ion-enhanced components. A simple analytical model, which explains the main deposition characteristics, was developed. Preferential sidewall deposition is obtained for higher ion fluxes and higher bias voltages where sputtering plays an important role. In this case no fluorocarbon passivation has to be removed from the bottom of the trench. The trench profile was optimised in the Bosch process by tuning the bias voltage during etching and passivation independently. It resulted in perfectly anisotropic trenches but the maximal obtainable aspect ratio was still limited by a small lateral etch. The characteristic role of the ions in the etching mechanism is explained in chapter 7. Ion-induced etching of both SiC in a SF6-O2 plasma and Si in a Cl2 plasma were investigated. The impact of the ions on the profile evolution can be examined more explicitly because spontaneous chemical reactions are absent for these plasma-material systems. The etching mechanism varies from fluorine-limited to ion-limited depending on the radical-to-ion flux ratio. Microtrenches are observed for an ion-limited etching mechanism. Fluorine-limited SiC etching is aspect ratio dependent in contrast to ion-limited SiC etching, which is aspect ratio independent. The etching of high aspect ratio SiC structures is limited by the positive sidewall taper. This is presumably caused by insufficient removal of the thin fluorocarbon layer on the surface. Si etching in a Cl2 plasma is always aspect ratio independent in contrast to SiC etching because of the low reaction probability. The conclusions and recommendations of this thesis are given in chapter 8.